Presentation Title

P-23 Understanding electrical conduction in MEPA-MOCVD grown InN

Presenter Status

Assistan Professor, Physics

Second Presenter Status

Assistant Research Professor, Electrical and Computer Engineering

Preferred Session

Poster Session

Location

Buller Hall Hallways

Start Date

22-10-2021 2:00 PM

End Date

22-10-2021 3:00 PM

Presentation Abstract

We are working on the electrical characterization of migration enhanced, plasma assisted metal-organic chemical vapor deposition (MEPA-MOCVD) grown Indium Nitride (InN). InN is a group III-Nitride semiconductor that has applications in sensing and energy production. Along with GaN and AlN, InN would allow for this material system to be used from infrared wavelengths through the UV. While work has been done (Cross et al., (536) 2020, J. Crystal Growth) to measure the carrier concentration ((3 ± 2) × 1020 cm-3) and mobility (10 – 70 cm2/V∙s) of these InN samples, the method of conductivity is still being explored.

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COinS
 
Oct 22nd, 2:00 PM Oct 22nd, 3:00 PM

P-23 Understanding electrical conduction in MEPA-MOCVD grown InN

Buller Hall Hallways

We are working on the electrical characterization of migration enhanced, plasma assisted metal-organic chemical vapor deposition (MEPA-MOCVD) grown Indium Nitride (InN). InN is a group III-Nitride semiconductor that has applications in sensing and energy production. Along with GaN and AlN, InN would allow for this material system to be used from infrared wavelengths through the UV. While work has been done (Cross et al., (536) 2020, J. Crystal Growth) to measure the carrier concentration ((3 ± 2) × 1020 cm-3) and mobility (10 – 70 cm2/V∙s) of these InN samples, the method of conductivity is still being explored.