P-23 Understanding electrical conduction in MEPA-MOCVD grown InN
Presenter Status
Assistan Professor, Physics
Second Presenter Status
Assistant Research Professor, Electrical and Computer Engineering
Preferred Session
Poster Session
Location
Buller Hall Hallways
Start Date
22-10-2021 2:00 PM
End Date
22-10-2021 3:00 PM
Presentation Abstract
We are working on the electrical characterization of migration enhanced, plasma assisted metal-organic chemical vapor deposition (MEPA-MOCVD) grown Indium Nitride (InN). InN is a group III-Nitride semiconductor that has applications in sensing and energy production. Along with GaN and AlN, InN would allow for this material system to be used from infrared wavelengths through the UV. While work has been done (Cross et al., (536) 2020, J. Crystal Growth) to measure the carrier concentration ((3 ± 2) × 1020 cm-3) and mobility (10 – 70 cm2/V∙s) of these InN samples, the method of conductivity is still being explored.
P-23 Understanding electrical conduction in MEPA-MOCVD grown InN
Buller Hall Hallways
We are working on the electrical characterization of migration enhanced, plasma assisted metal-organic chemical vapor deposition (MEPA-MOCVD) grown Indium Nitride (InN). InN is a group III-Nitride semiconductor that has applications in sensing and energy production. Along with GaN and AlN, InN would allow for this material system to be used from infrared wavelengths through the UV. While work has been done (Cross et al., (536) 2020, J. Crystal Growth) to measure the carrier concentration ((3 ± 2) × 1020 cm-3) and mobility (10 – 70 cm2/V∙s) of these InN samples, the method of conductivity is still being explored.